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首頁> 外文OA文獻 >Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

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Copper(I) Thiocyanate (CuSCN) Hole-Transport Layers Processed from Aqueous Precursor Solutions and Their Application in Thin-Film Transistors and Highly Efficient Organic and Organometal Halide Perovskite Solar Cells

機譯：水溶液中處理的硫氰酸銅（I）硫氰酸銅（CuSCN）空穴傳輸層及其在薄膜晶體管和高效有機和有機金屬鹵化物鈣鈦礦太陽能電池中的應(yīng)用

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摘要

This study reports the development of copper(I) thiocyanate (CuSCN) hole-transport layers (HTLs) processed from aqueous ammonia as a novel alternative to conventional n-alkyl sulfide solvents. Wide bandgap (3.4–3.9 eV) and ultrathin (3–5 nm) layers of CuSCN are formed when the aqueous CuSCN–ammine complex solution is spin-cast in air and annealed at 100 °C. X-ray photoelectron spectroscopy confirms the high compositional purity of the formed CuSCN layers, while the high-resolution valence band spectra agree with first-principles calculations. Study of the hole-transport properties using field-effect transistor measurements reveals that the aqueous-processed CuSCN layers exhibit a fivefold higher hole mobility than films processed from diethyl sulfide solutions with the maximum values approaching 0.1 cm2 V?1 s?1. A further interesting characteristic is the low surface roughness of the resulting CuSCN layers, which in the case of solar cells helps to planarize the indium tin oxide anode. Organic bulk heterojunction and planar organometal halide perovskite solar cells based on aqueous-processed CuSCN HTLs yield power conversion efficiency of 10.7% and 17.5%, respectively. Importantly, aqueous-processed CuSCN-based cells consistently outperform devices based on poly(3,4-ethylenedioxythiophene) polystyrene sulfonate HTLs. This is the first report on CuSCN films and devices processed via an aqueous-based synthetic route that is compatible with high-throughput manufacturing and paves the way for further developments.

機譯：這項研究報告了由氨水處理的硫氰酸銅（I）空穴傳輸層（HTL）的開發(fā)，作為傳統(tǒng)的正烷基硫化物溶劑的新型替代品。當將CuSCN-氨基配合物水溶液在空氣中旋鑄并在100°C退火時，會形成寬帶隙（3.4–3.9 eV）和超?。?-5 nm）的CuSCN層。 X射線光電子能譜證實了所形成的CuSCN層具有很高的成分純度，而高分辨率價帶譜與第一性原理計算相符。使用場效應(yīng)晶體管測量結(jié)果對空穴傳輸性質(zhì)的研究表明，水處理的CuSCN層的空穴遷移率比用二乙基硫溶液處理的薄膜高出五倍，最大值接近0.1 cm2 V-1 s-1。另一個有趣的特性是所得CuSCN層的表面粗糙度低，在太陽能電池的情況下，這有助于使銦錫氧化物陽極平坦化?；谒幚淼腃uSCN HTL的有機體異質(zhì)結(jié)和平面有機金屬鹵化物鈣鈦礦型太陽能電池的功率轉(zhuǎn)換效率分別為10.7％和17.5％。重要的是，基于水處理的基于CuSCN的電池始終優(yōu)于基于聚（3,4-乙撐二氧噻吩）聚苯乙烯磺酸鹽HTL的器件。這是有關(guān)通過水基合成路線加工的CuSCN薄膜和裝置的第一份報告，該路線與高通量制造兼容，并為進一步的發(fā)展鋪平了道路。